The material of transistor: Si Polarity: NPN Maximum collector power dissipation (Pc), W: 20 Maximum collector-base voltage |Ucb|, V: 230 Maximum collector-emitter voltage |Uce|, V: 230 Maximum emitter-base voltage |Ueb|, V: 5 Maximum collector current |Ic max|, A: 1 Maksimalna temperatura (Tj), °C: 150 Transition frequency (ft), MHz: 100 Collector capacitance (Cc), pF: 20 Forward current transfer ratio (hFE), min: 100
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